BUZ305 Siemens Semiconductor Group, BUZ305 Datasheet
BUZ305
Available stocks
Related parts for BUZ305
BUZ305 Summary of contents
Page 1
SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated V Type DS BUZ 305 800 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current °C C Avalanche current,limited ...
Page 2
Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...
Page 3
Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...
Page 4
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...
Page 5
Power dissipation tot C 160 W P tot 120 100 Safe operating area parameter 0.01 , ...
Page 6
Typ. output characteristics parameter µ 150W tot ...
Page 7
Drain-source on-resistance (on) j parameter 5.0 4 (on) 3.5 3.0 2.5 2.0 98% 1.5 typ 1.0 0.5 0.0 -60 - ...
Page 8
Avalanche energy parameter 7 27 900 mJ E 700 AS 600 500 400 300 200 100 0 20 ...