BUZ21L Siemens Semiconductor Group, BUZ21L Datasheet - Page 6

• Manufacturer Part Number: BUZ21L
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
D
DS
=
2 x I
V
50
40
35
30
25
20
15
10
60
50
45
40
35
30
25
20
15
10
A
A
5
0
5
0
0.0
DS
0
)
P
D
tot
1
p
1.0
x R
p
= 75W
= 80 µs , T
= 80 µs
2
DS(on)max
2.0
l
k
3
j
i
4
3.0
j
= 25 °C
g
5
h
4.0
6
D
= f ( V
5.0
7
f
e
c
a
8
GS
d
b
V GS [V]
V
V
V
a
b
c
d
e
f
g
h
i
j
k
l
DS
)
GS
V
10.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
9.0
7.0
10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
V
g
DS (on)
DS (on)
DS
fs
0.26
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
2 x I
20
16
14
12
10
S
8
6
4
2
0
0
0
=
V
V
GS
GS
3.0
3.5
D
a
a
4
p
I
[V] =
[V] =
x R
D
a
p
4.0
b
= 80 µs, T
10
)
= 80 µs,
8
DS(on)max
4.5
c
12
5.0
d
20
16
5.5
e
b
j
= 25 °C
6.0
f
20
30
6.5
g
24
c
7.0
h
40
28
8.0
fs
i
BUZ 21 L
32
= f
01/97
9.0
j
A
I
D
I
( I
d
D
A
10.0
k
k
D
i
g
e
)
j
40
f
h
60