BUZ21L Siemens Semiconductor Group, BUZ21L Datasheet

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BUZ21L

Manufacturer Part Number
BUZ21L
Description
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
Manufacturer
Siemens Semiconductor Group
Datasheet
1.BUZ21L.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ21L
Manufacturer:
INFINEON
Quantity:
5 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BUZ21L
Manufacturer:
NEC
Quantity:
8 000
SIPMOS
Semiconductor Group
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Type
BUZ 21 L
Maximum Ratings
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche current,limited by T
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
I
L = 340 µH, T
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
D
C
C
C
= 21 A, V
= 25 °C
= 25 °C
= 25 °C
®
Power Transistor
DD
j
= 25 °C
= 25 V, R
V
100 V
DS
GS
I
21 A
D
= 25
jmax
R
0.085
jmax
DS(on)
1
Symbol
I
I
I
E
E
V
V
P
T
T
R
R
D
Dpuls
AR
j
stg
AR
AS
GS
gs
tot
thJC
thJA
Package
TO-220 AB
Pin 1
G
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
11.5
E
100
Ordering Code
C67078-S1338-A2
21
84
21
75
75
1.67
14
20
Pin 2
D
BUZ 21 L
01/97
Unit
A
mJ
V
W
°C
K/W
Pin 3
S

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BUZ21L Summary of contents

Page 1

SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level V Type DS BUZ 21 L 100 V Maximum Ratings Parameter Continuous drain current °C C Pulsed drain current ...

Page 2

Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage 0.25 mA Gate threshold voltage DS, D Zero gate voltage drain current ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage ...

Page 5

Power dissipation tot tot Safe operating area parameter 0.01 , ...

Page 6

Typ. output characteristics parameter µ ° 75W tot ...

Page 7

Drain-source on-resistance (on) j parameter 10 0.28 0.24 R 0.22 DS (on) 0.20 0.18 0.16 0.14 98% 0.12 typ 0.10 0.08 0.06 0.04 0.02 0.00 ...

Page 8

Avalanche energy parameter 340 µH GS 110 ...

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