BUZ103 Siemens Semiconductor Group, BUZ103 Datasheet - Page 8

• Manufacturer Part Number: BUZ103
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
• Manufacturer: Siemens Semiconductor Group

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Semiconductor Group
(BR)DSS
E
(BR)DSS
GS
AS
= 25 , L = 63 µH
110
mJ
90
80
70
60
50
40
30
20
10
62
60
59
58
57
56
55
54
53
52
51
50
49
48
47
V
0
-60
20
= ( T
D
40
-20
= 40 A, V
j
)
60
20
80
AS
DD
= ( T
100
60
= 25 V
j
120
)
100
140
°C
T
T
°C
j
j
180
180
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
5
)
10
= 60 A
0,2
15
V
DS max
20
25
30
BUZ 103
0,8
35
07/96
V
Q
DS max
nC
Gate
45