BUZ103 Siemens Semiconductor Group, BUZ103 Datasheet - Page 7

• Manufacturer Part Number: BUZ103
• Description: SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
• Manufacturer: Siemens Semiconductor Group

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Semiconductor Group
DS (on)
C
DS (on)
0.11
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
10
10
10
pF
-60
4
3
2
1
0
DS
= ( T
)
D
5
j
GS
-20
)
= 28 A, V
= 0V, f = 1MHz
10
20
15
GS
98%
typ
60
20
= 10 V
25
100
30
°C
T
V
V
j
C
C
C
DS
oss
rss
iss
180
40
7
Gate threshold voltage
V
parameter: V
V
Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
I
GS (th)
F
= ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
V
-60
0.0
SD
3
2
1
0
= ( T
)
0.4
j
j
GS
, t
)
-20
p
= V
= 80 µs
0.8
DS
20
, I
1.2
T
T
T
T
D
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
98%
typ
2%
= 1 mA
60
1.6
100
2.0
BUZ 103
2.4
07/96
°C
T
V
j
SD
V
180
3.0