BUZ101SL Siemens Semiconductor Group, BUZ101SL Datasheet - Page 6

• Manufacturer Part Number: BUZ101SL
• Description: SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
• Manufacturer: Siemens Semiconductor Group

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Semiconductor Group
D
I
I
D
DS
D
= V
2 x I
45
35
30
25
20
15
10
80
60
50
40
30
20
10
A
A
5
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 55W
= 80 µs , T
DS(on)max
2
l
3
k
j
i
4
h
j
= 25 °C
D
5
= f (V
6
GS
7
)
g
e
c
a
f
b
d
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
V
V
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
8.0
5.0
10
6
Typ. drain-source on-resistance
R
parameter: t
R
DS (on)
DS (on)
0.22
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
= I
V
V
V
GS
GS
GS
2.5
3.0
3.5
a
a
a
p
[V] =
[V] =
[V] =
4
D
4.0
b
= 80 µs, T
)
8
4.5
c
a
5.0
d
12
5.5
e
j
16
= 25 °C
b
6.0
f
20
6.5
g
7.0
h
24
c
8.0
BUZ 101 SL
i
28
29/Jan/1998
SPP20N05L
10.0
j
I
D
A
d
i
e
g
j
36
h
f