BUZ101SL Siemens Semiconductor Group, BUZ101SL Datasheet
BUZ101SL
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BUZ101SL Summary of contents
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SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • rated • 175°C operating temperature • also in SMD available V Type DS BUZ 101 Maximum Ratings ...
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Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Electrical Characteristics Parameter Static Characteristics Drain- source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance = MHz Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C C Inverse diode direct current,pulsed °C C Inverse diode forward voltage = ...
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Power dissipation tot tot 100 120 140 Safe operating area ...
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Typ. output characteristics parameter µ ° 55W tot ...
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Drain-source on-resistance (on) j parameter 4 0.24 0. (on) 0.18 0.16 0.14 0.12 98% 0.10 typ 0.08 0.06 0.04 0.02 0.00 -60 -20 20 ...
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Avalanche energy parameter:I =20A 450µH GS 100 100 ...