SPA11N60C2 Infineon Technologies, SPA11N60C2 Datasheet - Page 8

• Manufacturer Part Number: SPA11N60C2
• Description: Power Transistor
• Manufacturer: Infineon Technologies

13 Forward characteristics of body diode
I
parameter: T j , t
15 Typ. switching time
t = f (R
par.: V
F
= f (V
10
ns
10
10
10
10
10
10
10
A
-1
2
1
0
3
2
1
0
DS
G
0
0
SPP11N60C2
SD
), inductive load, T
=380V, V
)
0.4
10
0.8
p
20
= 10 µs
GS
1.2
T
T
T
T
30
=0/+13V, I
j
j
j
j
t
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
d(off)
1.6
t
d(on)
40
j
=125°C
t
r
2
50
t
f
D
=11 A
2.4
V
V
R
SD
G
Final data
70
3
Page 8
14 Typ. switching time
t = f (I
par.: V
16 Typ. switching losses
E = f (I
par.: V
mWs
ns
10
10
10
10
0.7
0.5
0.4
0.3
0.2
0.1
D
0
3
2
1
0
DS
D
DS
0
0
), inductive load, T
), inductive load, T
*) E
commutation losses.
=380V, V
=380V, V
SPP11N60C2, SPB11N60C2
on
t
d(on)
includes SDP06S60 diode
5
5
E
on
*
10
GS
GS
10
=0/+13V, R
=0/+13V, R
t
f
15
j
=125°C
j
=125°C
15
SPA11N60C2
t
r
20
E
2002-08-12
off
G
G
t
d(off)
A
=6.8
=6.8
A
I
I
D
D
30
25