PSMN004-25P Philips, PSMN004-25P Datasheet - Page 6

• Manufacturer Part Number: PSMN004-25P
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: Philips

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
100
9
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
I
0
F
0
Gate-source voltage, VGS (V)
= f(V
0
ID = 75 A
VDD = 15 V
Tj = 25 C
Source-Drain Diode Current, IF (A)
VGS = 0 V
Fig.14. Typical reverse diode current.
0.1
25
SDS
0.2
); conditions: V
50
0.3
Source-Drain Voltage, VSDS (V)
75
0.4
Gate charge, QG (nC)
V
100
GS
175 C
0.5
= f(Q
125
0.6
GS
G
150
0.7
= 0 V; parameter T
)
0.8
175
Tj = 25 C
0.9
200
1
225
1.1
250
1.2
j
transistor
6
avalanche current (I
100
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
PSMN004-25B, PSMN004-25P
unclamped inductive load
0.01
Avalanche time, t
Tj prior to avalanche = 150 C
AS
) versus avalanche time (t
0.1
AS
(A)
AV
(ms)
Product specification
1
25 C
Rev 1.100
10
AV
);