PSMN004-25P Philips, PSMN004-25P Datasheet - Page 4

• Manufacturer Part Number: PSMN004-25P
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: Philips

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
100
1000
100
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
0
10
0
I
Fig.2. Normalised continuous drain current.
1
D
0
0
1
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
ID% = 100 I
Mounting Base temperature, Tmb (C)
Mounting Base temperature, Tmb (C)
DS
Drain-Source Voltage, VDS (V)
50
50
); I
D.C.
DM
single pulse; parameter t
75
75
D
D
/I
/P
10
D 25 ˚C
D 25 ˚C
100
100
= f(T
= f(T
125
125
100 us
mb
1 ms
tp = 10 us
mb
10 ms
100 ms
mb
)
= 25 ˚C
)
150
150
100
p
175
175
transistor
4
0.001
100
0.018
0.016
0.014
0.012
0.008
0.006
0.004
0.002
Fig.5. Typical output characteristics, T
0.01
90
80
70
60
50
40
30
20
10
0.02
0.01
Fig.6. Typical on-state resistance, T
0.1
0
1
1E-06
0
0
Drain Current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
Transient thermal impedance, Zth j-mb (K/W)
0.2
0.1
Fig.4. Transient thermal impedance.
Tj = 25 C
0.05
D = 0.5
5 V
0.02
10 V
0.2
2 V
single pulse
PSMN004-25B, PSMN004-25P
10
Z
1E-05
th j-mb
0.4
20
4.5 V
2.2 V
= f(t); parameter D = t
Drain-Source Voltage, VDS (V)
0.6
30
1E-04
Drain Current, ID (A)
R
Pulse width, tp (s)
I
DS(ON)
0.8
D
40
= f(V
2.4 V
1E-03
2.8 V
50
= f(I
1
DS
)
60
1.2
D
)
P
1E-02
D
Product specification
70
1.4
tp
2.6 V
T
5 V
80
p
VGS = 10V
1E-01
1.6
/T
VGS = 2.6 V
D = tp/T
j
j
= 25 ˚C .
Tj = 25 C
= 25 ˚C .
2.8 V
90
4.5 V
1.8
Rev 1.100
1.8 V
2.4 V
2.2 V
2 V
1E+00
100
2