MTP75N06HD Motorola, MTP75N06HD Datasheet - Page 3

• Manufacturer Part Number: MTP75N06HD
• Description: TMOS POWER FET
• Manufacturer: Motorola

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Motorola TMOS Power MOSFET Transistor Device Data
0.016
0.014
0.012
0.010
0.008
0.006
0.004
150
125
100
1.9
1.6
1.3
0.7
75
50
25
– 50
0
1
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
I D = 37.5 A
T J = 25 C
V GS = 10 V
T J = 25 C
– 25
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
25
0.5
T J , JUNCTION TEMPERATURE ( C)
0
I D , DRAIN CURRENT (AMPS)
50
and Temperature
25
Temperature
T J = 100 C
– 55 C
25 C
50
9 V
75
1
V GS = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS
75
100
100
1.5
125
6 V
125
5 V
7 V
8 V
150
150
2
0.012
0.010
0.009
0.008
0.007
0.006
0.011
1000
150
125
100
100
75
50
25
10
0
1
2
0
0
Figure 4. On–Resistance versus Drain Current
V DS 10 V
T J = 25 C
V GS = 0 V
Figure 6. Drain–To–Source Leakage
10
Figure 2. Transfer Characteristics
25
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
3
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
50
20
and Gate Voltage
4
T J = 125 C
V GS = 10 V
15 V
100 C
100 C
25 C
75
30
5
T J = – 55 C
100
40
6
MTP75N06HD
25 C
125
50
7
3
150
60
8