MTP75N06HD Motorola, MTP75N06HD Datasheet

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MTP75N06HD

Manufacturer Part Number
MTP75N06HD
Description
TMOS POWER FET
Manufacturer
Motorola
Datasheet

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Part Number:
MTP75N06HD
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
HDTMOS E-FET
High Density Power FET
N–Channel Enhancement–Mode Silicon Gate
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high–cell density HDTMOS E–FET is designed to
Motorola, Inc. 1995
Ultra Low R DS(on) , High–Cell Density, HDTMOS
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Avalanche Energy Specified
Derate above 25 C
(V DD = 25 Vdc, V GS = 10 Vdc, I L = 75 Apk, L = 0.177 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
— Single Pulse
(T C = 25 C unless otherwise noted)
Data Sheet
10 s)
Rating
G
D
S
Symbol
T J , T stg
V DGR
V DSS
R JC
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTP75N06HD
R DS(on) = 10.0 mOHM
CASE 221A–06, Style 5
TMOS POWER FET
Motorola Preferred Device
– 55 to 175
Value
75 AMPERES
62.5
225
150
500
260
1.0
1.0
TO–220AB
60
60
75
50
20
30
Order this document
60 VOLTS
by MTP75N06HD/D
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTP75N06HD Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 Data Sheet Rating 10 s) Order this document by MTP75N06HD/D MTP75N06HD Motorola Preferred Device TMOS POWER FET 75 AMPERES R DS(on) = 10.0 mOHM 60 VOLTS D G CASE 221A– ...

Page 2

... MTP75N06HD ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 125 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ...

Page 3

... 1 100 – 100 125 150 100 125 150 Temperature MTP75N06HD 150 125 100 75 50 100 – GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.012 ...

Page 4

... MTP75N06HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... 0.5 0.58 0.66 0. SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current MTP75N06HD 1000 100 t d(off) t d(on GATE RESISTANCE (Ohms) Figure 9 ...

Page 6

... MTP75N06HD www.DataSheet4U.com The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...

Page 7

... TIME (s) Figure 14. Thermal Response di/ Figure 15. Diode Reverse Recovery Waveform MTP75N06HD P (pk ( CURVES APPLY FOR POWER PULSE TRAIN SHOWN t 1 READ TIME J(pk) – (pk (t) DUTY CYCLE 1.0E– ...

Page 8

... K 0.500 0.562 12.70 L 0.045 0.060 1.15 N 0.190 0.210 4.83 Q 0.100 0.120 2.54 R 0.080 0.110 2.04 S 0.045 0.055 1.15 T 0.235 0.255 5.97 U 0.000 0.050 0.00 V 0.045 ––– 1.15 Z ––– 0.080 ––– Motorola TMOS Power MOSFET Transistor Device Data MTP75N06HD/D *MTP75N06HD/D* MAX 15.75 10.28 4.82 0.88 3.73 2.66 3.93 0.64 14.27 1.52 5.33 3.04 2.79 1.39 6.47 1.27 ––– 2.04 ...

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