MTP3N50E Motorola, MTP3N50E Datasheet - Page 3

• Manufacturer Part Number: MTP3N50E
• Description: TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS
• Manufacturer: Motorola

Motorola TMOS Power MOSFET Transistor Device Data
6
5
4
3
2
1
6
4
2
0
0
5
4
3
2
1
0
8
0
0
0
Figure 5. On–Resistance versus Drain Current
T J = 25 C
V GS = 10 V
2
V DS 10 V
Figure 1. On–Region Characteristics
Figure 3. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
4
1
2
I D , DRAIN CURRENT (AMPS)
6
8
2
25 C
100 C
10
4
T J = 100 C
12
3
TYPICAL ELECTRICAL CHARACTERISTICS
25 C
–55 C
14
T J = –55 C
V GS = 10 V
6
16
4
18
6 V
5 V
7 V
4 V
20
8
5
2.5
1.5
0.5
1.2
1.1
0.9
0.8
1.2
1.1
0.9
0.8
1
1
2
1
–50
–50
–50
Figure 6. On–Resistance versus Temperature
Figure 2. Gate–Threshold Voltage Variation
–25
–25
Figure 4. Breakdown Voltage Variation
V GS = 0
I D = 250 A
V GS = 10 V
I D = 1.5 A
T J , JUNCTION TEMPERATURE ( C)
T J , JUNCTION TEMPERATURE ( C)
T J , JUNCTION TEMPERATURE ( C)
0
0
0
With Temperature
With Temperature
25
25
50
50
50
V DS = V GS
I D = 0.25 mA
75
75
100
100
100
MTP3N50E
125
125
3
150
150
150