MTP3N50E Motorola, MTP3N50E Datasheet
MTP3N50E
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MTP3N50E Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 < 150 C) — 100 C Order this document by MTP3N50E/D MTP3N50E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 500 VOLTS R DS(on) = 3.0 OHMS S CASE 221A–06, Style 5 TO–220AB ...
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... MTP3N50E ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( 0.25 mA) Zero Gate Voltage Drain Current ( 500 400 125 C) Gate–Body Leakage Current, Forward (V GSF = 20 Vdc Gate– ...
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... Figure 4. Breakdown Voltage Variation 2 1 1 –50 –25 Figure 6. On–Resistance versus Temperature MTP3N50E 0. 100 125 150 JUNCTION TEMPERATURE ( C) With Temperature 0 50 100 150 JUNCTION TEMPERATURE ( C) With Temperature 0 25 ...
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... MTP3N50E SAFE OPERATING AREA INFORMATION SINGLE PULSE 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0. 100 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Maximum Rated Forward Biased Safe Operating Area FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain–to–source voltage and drain current that a device can safely handle when it is forward biased, or when it is on, or being turned on ...
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... Figure 11. Commutating Waveforms – Figure 13. Commutating Safe Operating Area 500 600 V (BR)DSS 4700 F 250 Figure 15. Unclamped Inductive Switching MTP3N50E DS(pk /dt V dsL MAX. CSOA STRESS AREA R GS DUT – ...
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... MTP3N50E 1000 800 600 400 C rss 200 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 16. Capacitance Variation 2N3904 100 PULSE WIDTH 100 s, DUTY CYCLE 10 ...
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... T S STYLE 5: U PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN R J CASE 221A–06 ISSUE Y MTP3N50E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX ...
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... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MTP3N50E/D* Motorola TMOS Power MOSFET Transistor Device Data MTP3N50E/D ...