SiR880DP Vishay Siliconix, SiR880DP Datasheet - Page 3

• Manufacturer Part Number: SiR880DP
• Description: N-Channel 80 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65702
S10-0635-Rev. A, 22-Mar-10
0.010
0.009
0.008
0.007
0.006
0.005
0.004
100
80
60
40
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
V
= 20 A
GS
V
0.5
DS
11
20
= 7.5 V
V
DS
= 40 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
V
- Total Gate Charge (nC)
D
GS
DS
Gate Charge
- Drain Current (A)
1.0
22
40
= 10 V thru 5 V
= 20 V
V
V
GS
GS
1.5
33
60
= 4 V
= 4.5 V
V
DS
V
= 60 V
V
GS
GS
2.0
44
80
= 3 V
= 10 V
100
2.5
55
4500
3600
2700
1800
900
2.1
1.8
1.5
1.2
0.9
0.6
10
8
6
4
2
0
0
- 50
0
0
C
C
C
I
oss
D
rss
iss
On-Resistance vs. Junction Temperature
= 20 A
- 25
V
16
1
T
DS
T
V
T
J
Transfer Characteristics
C
0
GS
C
- Junction Temperature (°C)
T
- Drain-to-Source Voltage (V)
= - 55 °C
= 125 °C
C
- Gate-to-Source Voltage (V)
V
= 25 °C
GS
Capacitance
25
32
2
= 4.5 V
50
V
GS
Vishay Siliconix
48
= 10 V
3
75
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SiR880DP
100
www.vishay.com
64
4
125
150
80
5
3