SIR470DP Vishay Siliconix, SIR470DP Datasheet - Page 5
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SIR470DP
Manufacturer Part Number
SIR470DP
Description
N-Channel MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SIR470DP.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR470DP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SIR470DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet4U.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68899
S-82295-Rev. A, 22-Sep-08
125
100
75
50
25
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
180
144
108
72
36
0
0
125
New Product
25
150
T
C
Package Limited
Current Derating*
50
- Case Temperature (°C)
75
100
3.0
2.4
1.8
1.2
0.6
0.0
0
125
25
Power, Junction-to-Ambient
T
150
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
SiR470DP
www.vishay.com
125
150
5