NDT456 Fairchild, NDT456 Datasheet

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NDT456

Manufacturer Part Number
NDT456
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild
Datasheet

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Absolute Maximum Ratings
______________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1998 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
,T
Power SOT P-Channel enhancement mode power field
effect
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
JA
JC
STG
transistors
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
are
- Continuous
- Pulsed
produced
T
G
using
A
= 25°C unless otherwise noted
D
D
Fairchild's
(Note 1c)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
S
Features
-7.5 A, -30 V. R
High density cell design for extremely low R
High power and current handling capability in a widely
used surface mount package.
R
-65 to 150
NDT456P
DS(ON)
DS(ON)
±7.5
±20
±20
-30
1.3
1.1
42
12
3
= 0.045
= 0.030
@ V
@ V
G
GS
GS
December 1998
= -4.5 V.
= -10 V
D
DS(ON)
NDT456P Rev. F
.
S
°C/W
°C/W
Units
°C
W
V
V
A

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NDT456 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) December 1998 = 0.030 @ V = -10 V DS(ON 0.045 @ V = -4.5 V. DS(ON DS(ON NDT456P Units -30 V ±20 V ±7.5 A ± 1.3 1.1 -65 to 150 °C 42 °C/W 12 °C/W NDT456P Rev. F ...

Page 2

... Min Typ Max - 55°C -10 J 100 -100 -1 -1 125°C -0.5 -1.1 -2.6 J 0.026 0. 125°C 0.035 0.054 J 0.041 0.045 -20 -10 13 1440 905 355 120 70 130 70 130 NDT456P Rev. F Units V µA µ ...

Page 3

... defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment pad of 2oz copper. 1b Min Typ Max Units -2 0.85 -1.2 V 140 ns 1c NDT456P Rev. F ...

Page 4

... DRAIN CURRENT (A) D Voltage and Drain Current. = -10V T = 125°C J 25°C -55° -12 - DRAIN CURRENT (A) D Current and Temperature 250µ JUNCTION TEM PERATURE (°C) J Temperature. -10 -20 - NDT456P Rev. F ...

Page 5

... Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( with Current and Temperature -10V -20V GATE CHARGE (nC off t t d(off) r 90% 90% 10% 10% 90% 50% 50% PULSE W IDTH 1 INVERTED NDT456P Rev. F ...

Page 6

... COPPER ING PAD AREA ( -10V = 25°C 0 DRAIN-SOURCE VOLTAGE ( ( See Note P ( Duty Cycle NDT456P Rev. F ...

Page 7

SOT-223 Tape and Reel Data and Package Dimensions SOT-223 Packaging Configuration: Figure 1.0 Customized Label SOT-223 Packaging Information Standard D84Z Packaging Option (no flow code) Packaging type TNR TNR 2,500 500 Qty per Reel/Tube/Bag Reel Size 13" Dia 7" Dia ...

Page 8

SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 Embossed Carrier Tape Configuration: Figure 3 Pkg type SOT-223 6.83 7.42 12.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (12mm) Notes: A0, B0, and ...

Page 9

SOT-223 Tape and Reel Data and Package Dimensions, continued SOT-223 (FS PKG Code 47 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 September 1999, Rev. C ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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