NDT452 Fairchild, NDT452 Datasheet

NDT452

Manufacturer Part Number

NDT452

Description

P-Channel Enhancement Mode Field Effect Transistor

Manufacturer

Fairchild

Datasheet

1.NDT452.pdf (6 pages)

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* Order option J23Z for cropped center drain lead.

Symbol

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

________________________________________________________________________________

DSS

GSS

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

-5A, -30V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

DS(ON)

NDT452AP

-65 to 150

= 0.1

= 0.065

- 15

±20

-30

1.3

1.1

-5

@ V

= -4.5V.

= -10V

DS(ON)

June 1996

NDT452AP Rev. B1

Units

°C/W

°C

Related parts for NDT452

NDT452 Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) June 1996 = 0.065 @ V = -10V DS(ON 0 -4.5V. DS(ON DS(ON NDT452AP -30 ± 1.3 1.1 -65 to 150 42 12 NDT452AP Rev Units °C °C/W °C/W ...

Page 2

... - GEN GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -1 -1.6 -2.8 V -0.7 -1.2 -2.2 0.052 0.065 0.075 0.13 0.085 0.1 - 690 pF 430 pF 160 3.2 nC 5.2 nC NDT452AP Rev. B1 ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.5 A (Note -2 /dt = 100 A/µ Min Typ Max Units -2.5 A -0.85 -1.2 V 100 ns is guaranteed NDT452AP Rev. B1 ...

Page 4

... GS - 4.0 -4.5 -5.0 -6 -12 - DRAIN CURRENT (A) D Voltage and Drain Current. = -10V T = 125°C J 25°C -55° -12 - DRAIN CURRENT ( -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. -10 -20 -20 GS 125 150 NDT452AP Rev. B1 ...

Page 5

... Figure 12. Switching Waveforms 25°C -55°C 0.4 0.8 1.2 1 BODY DIODE FORWARD VOLTAGE ( -5V DS -10V -20V GATE CHARGE (nC off t t d(off PULSE WIDTH NDT452AP Rev INVERTED ...

Page 6

... COPPER MOUNTING PAD AREA ( -10V GS = See Note 25° DRAIN-SOURCE CURRENT ( ( See Note P(pk Duty Cycle ( NDT452AP Rev. B1 ...

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