UPA835 NEC, UPA835 Datasheet - Page 3

• Manufacturer Part Number: UPA835
• Description: NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
• Manufacturer: NEC

Notes 1. Pulse Measurement: PW
h
(2) Q2
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Marking
h
h
FE
FE
Value of Q1
Value of Q2
CLASSIFICATION
Rank
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
method), with emitter connected to guard pin of capacitance meter.
Parameter
75 to 150
70 to 140
FB
37
Symbol
S
I
I
h
C
NF
CBO
EBO
f
21e
350 s, Duty Cycle
FE
T
re
2
V
V
V
V
V
V
V
Data Sheet P14555EJ1V0DS00
CB
EB
CE
CE
CB
CE
CE
= 1 V, I
= 10 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
C
C
C
E
C
C
E
= 0
= 7 mA
= 7 mA, f = 1 GHz
= 0, f = 1 MHz
= 7 mA, f = 1 GHz
= 7 mA, f = 1 GHz
Conditions
= 0
2%
Note 1
Note 2
MIN.
3.0
7.0
70
TYP.
4.5
0.7
9.0
1.2
PA835TC
MAX.
140
1.0
1.0
1.5
2.5
GHz
Unit
pF
dB
dB
A
A
3