UPA679TB NEC, UPA679TB Datasheet

UPA679TB

Manufacturer Part Number

UPA679TB

Description

N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Manufacturer

NEC

Datasheet

1.UPA679TB.pdf (10 pages)

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Meier Automation Equipment Co., Limited

Part Number:

UPA679TB-T1

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NEC

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Document No. G16615EJ1V0DS00 (1st edition)

Date Published February 2003 NS CP(K)

Printed in Japan

DESCRIPTION

applications such as power switch of portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

• Two MOS FET circuits in same size package as SC-70

ORDERING INFORMATION

Marking: YA

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (2 units)

Channel Temperature

Storage Temperature

Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with

The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source.

The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for

N-ch

P-ch

PART NUMBER

2. Mounted on FR-4 board of 2500 mm

µ PA679TB

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

caution for electrostatic discharge.

DS(on)1

DS(on)3

DS(on)1

DS(on)3

ESD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

= ± ± ± ± 100 V TYP. (C = 200 pF, R = 0 Ω Ω Ω Ω , Single pulse)

= 0.57 Ω MAX. (V

= 0.88 Ω MAX. (V

= 1.45 Ω MAX. (V

= 2.98 Ω MAX. (V

N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

= 0 V)

Note2

= 4.5 V, I

= 2.5 V, I

= −4.5 V, I

= −2.5 V, I

SC-88 (SSP)

PACKAGE

D(pulse)

D(DC)

DSS

GSS

stg

= 25°C)

FOR SWITCHING

DATA SHEET

= 0.30 A)

= 0.15 A)

x 1.1 mm

= −0.20 A)

= −0.15 A)

±0.35 / m0.25

±1.40 / m1.00

–55 to +150

±12 / m12

20 / −20

MOS FIELD EFFECT TRANSISTOR

150

0.2

°C

PACKAGE DRAWING (Unit: mm)

0.65

0.2

PIN CONNECTION (Top View)

µ µ µ µ PA679TB

2.0 ±0.2

+0.1

-0

1.3

0.65

0.15

0.9 ±0.1

+0.1

-0.05

0.7

Source 1

Gate 1

Drain 2

Source 2

Gate 2

Drain 1

0 to 0.1

2003

Related parts for UPA679TB

UPA679TB Summary of contents

Page 1

... Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ Mounted on FR-4 board of 2500 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

ELECTRICAL CHARACTERISTICS = 25° ° ° ° C) (1) N-ch PART (T A CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance ...

Page 3

P-ch PART (T = 25° ° ° ° CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer ...

Page 4

TYPICAL CHARACTERISTICS (1) N-ch PART (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° DRAIN CURRENT vs. ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.2 Pulsed 2 0. 0.8 0 ...

Page 6

SWITCHING CHARACTERISTICS 1000 Ω d(off) 100 d(on) 10 0.01 0 Drain Current - SOURCE ...

Page 7

P-ch PART (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A DRAIN CURRENT vs. DRAIN TO ...

Page 8

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −2 −0. −4 −4 −0. ...

Page 9

SWITCHING CHARACTERISTICS 1000 = −10 −4 Ω 100 t d(off d(on) 10 -0.01 -0 Drain Current - A D ...

Page 10

... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • ...

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