UPA2781GR NEC, UPA2781GR Datasheet
UPA2781GR
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UPA2781GR Summary of contents
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... Rectangle wave, 50% Duty Cycle 3. Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...
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... TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle 25°C, unless otherwise noted. All terminals are connected.) A SYMBOL TEST CONDITIONS DSS 125° ± ...
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... Mounted on ceramic substrate 2 of 1200 mm x 2.2 mm 0.01 0.01 0 Drain to Source Voltage - V DS TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET) 1000 100 25°C. All terminals are connected.) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 2.4 MOSFET 2 1.6 1.2 SCHOTTKY 0.8 0.4 0 140 160 100 ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY) 1000 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 4 4 100 125 150 T - Channel Temperature - °C ch ...
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