UPA2718GR NEC, UPA2718GR Datasheet
UPA2718GR
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UPA2718GR Summary of contents
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... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
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... BV DSS Starting T ch TEST CIRCUIT 3 GATE CHARGE D.U.T. = − Ω PG 25°C, All terminals are connected.) A SYMBOL TEST CONDITIONS − DSS GSS − − V ...
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ELECTRICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -1000 I D(pulse) -100 ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -150 Pulsed −4.5 V -125 V = − -100 −4 V -75 -50 - -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE − −4 − −6 Pulsed 0 - 100 T - Channel Temperature - °C ch SWITCHING ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD -100 = − - − −20 → Ω Starting T = 25°C ch -0.1 10 ...
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... NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • ...