UPA2716GR NEC, UPA2716GR Datasheet - Page 3

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UPA2716GR

Manufacturer Part Number
UPA2716GR
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC
Datasheet

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TYPICAL CHARACTERISTICS (T
-1000
-0.01
120
100
-100
-0.1
80
60
40
20
-10
0
-1
-0.01
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
T
Single pulse
Mounted on ceramic substrate of
1200 mm
(at V
Power Dissipation Limited
R
A
DS(on)
= 25°C
25
V
T
GS
DS
A
Limited
= 10 V)
- Ambient Temperature - °C
2
- Drain to Source Voltage - V
-0.1
1000
x 2.2 mm
50
100
0.1
10
1
100
I
D(DC)
75
µ
-1
I
100
D(pulse)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
DC
1 m
Single pulse, T
R
R
125
100 ms
th(ch-A)1
th(ch-A)2
A
-10
PW = 100 µs
= 25°C)
: Mounted on ceramic substrate of 1200 mm
: Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
150
10 m
1 ms
10 ms
175
A
-100
Data Sheet G16827EJ2V0DS
= 25°C
PW - Pulse Width - s
100 m
1
2.8
2.4
1.6
1.2
0.8
0.4
2
0
0
10
2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
x 2.2 mm
25
T
A
- Ambient Temperature - °C
50
100
R
R
th(ch-A)2
th(ch-A)1
75
Mounted on ceramic
substrate of
1200 mm
1000
100
125
2
µ
x 2.2 mm
PA2716GR
150
175
3

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