UPA1707 NEC, UPA1707 Datasheet

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UPA1707

Manufacturer Part Number
UPA1707
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
This product is N-Channel MOS Field Effect
Low on-resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
iss
PA1707G
G13084EJ1V0DS00 (1st edition)
January 1999 NS CP(K)
= 10.0 m
= 12.5 m
= 14.0 m
: C
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
iss
= 1400 pF (TYP.)
10 s, Duty Cycle
(TYP.) (V
(TYP.) (V
(TYP.) (V
Note1
DS
A
GS
The information in this document is subject to change without notice.
= 25°C)
= 0 V)
= 0 V)
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 4.0 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note2
1 %
A
D
D
D
= 25°C, All terminals are connected.)
= 5.0 A)
INDUSTRIAL USE
I
= 5.0 A)
= 5.0 A)
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
SWITCHING
2
–55 to +150
x 1.7 mm
MOS FIELD EFFECT TRANSISTOR
150
±20
±10
±40
2.0
30
8
1
°C
°C
W
V
V
A
A
PACKAGE DRAWING (Unit : mm)
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1,2,3
4
5,6,7,8
0.5 ±0.2
6.0 ±0.3
PA1707
4.4
; Source
; Gate
; Drain
Source
Drain
©
Body
Diode
0.8
0.10
1998

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UPA1707 Summary of contents

Page 1

... Duty Cycle 2. Mounted on ceramic substrate of 1200 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

... Reverse Recovery Charge TEST CIRCUIT 1 SWITCHING TIME D.U. Wave Form Wave Form = 1 s Duty Cycle °C, All terminals are connected.) A SYMBOL TEST CONDITIONS 5.0 A DS(on 4 5.0 A DS(on 4 5.0 A DS(on ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚C A 25˚C 75˚C 125˚ ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 120 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO ...

Page 6

Data Sheet G13084EJ1V0DS00 PA1707 ...

Page 7

Data Sheet G13084EJ1V0DS00 PA1707 7 ...

Page 8

... Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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