UPA1453H NEC, UPA1453H Datasheet

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UPA1453H

Manufacturer Part Number
UPA1453H
Description
PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Part Number:
UPA1453H
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Part Number:
UPA1453H
Manufacturer:
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Quantity:
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Document No. IC-3519
Date Published September 1994 P
Printed in Japan
(O. D. No. IC-6339)
DESCRIPTION
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The PA1453 is PNP silicon epitaxial Power Transistor
Easy mount by 0.1 inch of terminal interval.
High h
h
V
FE
CE(sat)
PA1453H
= 100 to 400 (at I
FE
= –0.3 V MAX. (at I
300 s, Duty Cycle
. Low V
a
c
= 25 ˚C
CE(sat)
= 25 ˚C
PNP SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
C
.
= –2 A)
The information in this document is subject to change without notice.
C
= –2 A)
10 %
HIGH SPEED SWITCHING USE
V
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
* –10
Quality Grade
DATA SHEET
INDUSTRIAL USE
–1.0
150
Standard
–60
–60
3.5
28
–7
–5
a
= 25 ˚C)
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
2
1
1.4
1 2 3 4 5 6 7 8 9 10
3
26.8 MAX.
0.6 ±0.1
CONNECTION DIAGRAM
4
PACKAGE DIMENSION
2, 4, 6, 8
3, 5, 7, 9
1, 10
(in millimeters)
5
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
6
2.54
PA1453
7
4.0
8
©
0.5 ±0.1
1.4
9
10
1994

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UPA1453H Summary of contents

Page 1

... CE(sat) ORDERING INFORMATION Part Number Package PA1453H 10 Pin SIP Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (T Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 DC Current Gain h FE3 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) ...

Page 3

... TYPICAL CHARACTERISTICS (T a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Ambient Temperature - ˚C a TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1453 4 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 100 T - Ambient Temperature - ˚ CURRENT GAIN vs. ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 0 Pulse Width - ms COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE –1.0 –0.8 –0.6 –0.4 –0.2 0 –10 –20 – Collector to Emitter Voltage - V ...

Page 5

... REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1453 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 ...

Page 6

... The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. ...

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