HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 8

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT3008R/HAT3008RJ
8
Vin
15 V
Vin
10 V
10
Switching Time Test Circuit
Vin Monitor
8
6
4
2
0
10 V
Source to Drain Voltage
50
Avalanche Test Circuit
V
Monitor
0.4
Reverse Drain Current vs.
50
Source to Drain Voltage
DS
5 V
Rg
D.U.T.
0.8
V
GS
D. U. T
R
1.2
V
= 30 V
I
Monitor
L
DD
= 0, –5 V
AP
Vout
Monitor
L
Pulse Test
V
1.6
SD
(V)
V
2.0
DD
0
V
td(on)
DD
Vout
Vin
E
AR
2.5
2.0
1.5
1.0
0.5
0
Switching Time Waveform
I
25
=
10%
AP
10%
1
2
Maximun Avalanche Energy vs.
Channel Temperature Tch (°C)
Channel Temperature Derating
90%
I
• L • I
tr
Avalanche Waveform
D
50
AP
2
td(off)
75
•
90%
V
DSS
100
V
90%
DSS
V
I
V
L = 100 µH
duty < 0.1 %
Rg > 50
– V
DS
AP
DD
10%
V
t
125
DD
f
= 5 A
(BR)DSS
= 25 V
150