HAT3008R Hitachi Semiconductor, HAT3008R Datasheet - Page 10

• Manufacturer Part Number: HAT3008R
• Description: Silicon N/P Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT3008R/HAT3008RJ
10
–0.5
–0.4
–0.3
–0.2
–0.1
0.5
0.4
0.3
0.2
0.1
–40
0
Static Drain to Source on State Resistance
0
Drain to Source Saturation Voltage vs.
Pulse Test
Gate to Source Voltage
V
GS
Case Temperature
–10 V
–4
0
Gate to Source Voltage
= –4 V
vs. Temperature
–8
40
–0.5 A
–12
80
Pulse Test
Tc
–0.5, –1 A
I
V
–1 A
D
I
–16
120
GS
D
–0.5 A
–1 A
= –2 A
(°C)
= –2 A
–2 A
(V)
160
–20
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
20
10
Static Drain to Source on State Resistance
–0.1
1
–0.1
5
2
1
V
Pulse Test
Forward Transfer Admittance vs.
DS
–0.2
–0.3
= 10 V
Drain Current I
V
Drain Current
GS
vs. Drain Current
Ta = –25 °C
–0.5
–1
–10 V
Drain Current
= –4 V
–3
–1
75 °C
–10
–2
D
I
D
Pulse Test
(A)
(A)
25 °C
–30
–5
–100
–10