HAT3004R Hitachi, HAT3004R Datasheet - Page 3

• Manufacturer Part Number: HAT3004R
• Description: Silicon N-Channel / P-Channel Power MOSFET
• Manufacturer: Hitachi

Electrical Characteristics (N channel) (Ta = 25°C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note:
4. Pulse test
Symbol Min
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DS(on)
DF
fs
|
30
±20
—
—
1.0
—
—
3.5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.050
0.078
5.5
310
220
100
17
190
25
60
0.9
50
Max
—
—
±10
10
2.0
0.065
0.11
—
—
—
—
—
—
—
—
1.4
—
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
V
I
I
I
V
V
f = 1MHz
V
V
IF = 5.5A, V
IF = 5.5A, V
diF/ dt =20A/µs
D
G
D
D
D
GS
DS
DS
DS
GS
GS
DD
= 10mA, V
= ±100 A, V
= 3A, V
= 3A, V
= 3A, V
= 30 V, V
= 10V, I
= 10V
= ±16V, V
= 0
= 4V, I
10V
GS
GS
DS
D
HAT3004R
GS
GS
= 10V
= 3A
= 10V
= 4V
D
GS
GS
DS
= 1mA
= 0
= 0
DS
= 0
= 0
= 0
= 0
Note4
Note4
Note4
Note4
3