HAT2019R Hitachi Semiconductor, HAT2019R Datasheet - Page 6

• Manufacturer Part Number: HAT2019R
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT2019R
6
0.0001
0.001
0.01
0.1
10
10 µ
1
D = 1
0.5
100 µ
Normalized Transient Thermal Impedance vs. Pulse Width
50
40
30
20
10
1 m
0
Source to Drain Voltage
0.4
10 m
Reverse Drain Current vs.
Souece to Drain Voltage
5 V
Pulse Width PW (S)
0.8
100 m
1.2
V
GS
Pulse Test
1
= 0 V
V
1.6
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P
SD
DM
ch – f(t) = s (t) •
ch – f = 83.3 °C/W, Ta = 25 °C
(V)
10
2.0
PW
T
100
ch – f
1000
D =
PW
T
10000