HAT2019R Hitachi Semiconductor, HAT2019R Datasheet - Page 2

• Manufacturer Part Number: HAT2019R
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

HAT2019R
Absolute Maximum Ratings (Ta = 25 C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25 C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Note:
2
1. PW
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. Pulse test
10 s, duty cycle
Symbol Min
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
1 %
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
DS(on)
fs
|
Symbol
V
V
I
I
I
Pch
Tch
Tstg
D
D(pulse)
DR
DSS
GSS
Note2
30
—
—
0.5
—
—
10
—
—
—
—
—
—
—
—
—
Note1
12
Typ
920
550
—
—
—
—
—
0.020
0.027
16
225
25
180
165
185
0.8
60
Max
—
—
10
1.5
0.027
0.037
—
—
—
—
—
—
—
—
1.3
—
Ratings
30
8
64
8
2.5
150
– 55 to + 150
10
12
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
V
I
I
I
V
V
f = 1MHz
V
V
IF = 8 A , V
IF = 8 A, V
diF/ dt = 20 A/ s
D
G
D
D
D
GS
DS
DS
DS
GS
GS
DD
= 10 mA, V
=
= 4 A, V
= 4 A, V
= 4 A, V
=
= 30 V, V
= 10 V, I
= 10 V
= 0
= 4 V, I
10 V
100 A, V
Unit
V
V
A
A
A
W
C
C
10 V, V
GS
GS
DS
GS
D
GS
= 4 A
= 4 V
= 2.5 V
= 10 V
= 0
GS
D
GS
= 0
= 1 mA
DS
= 0
= 0
DS
Note3
= 0
= 0
Note3
Note3
Note3