HAT1055RJ Renesas Technology, HAT1055RJ Datasheet - Page 6

• Manufacturer Part Number: HAT1055RJ
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 6 of 9
–100
1000
–20
–40
–60
–80
500
200
100
50
20
10
–0.1 –0.3
0
0
Reverse Drain Current
V
Dynamic Input Characteristics
DS
V
Body-Drain Diode Reverse
8
DD
Gate Charge
= –10 V
–1
Recovery Time
–25 V
–50 V
V
16
DD
di / dt = 100 A / s
V
–3
= –10 V
GS
–25 V
–50 V
= 0, Ta = 25 C
24
Qg (nc)
–10
I
I
DR
D
V
32
= –5 A
–30
GS
(A)
–100
40
0
–4
–8
–12
–16
–20
1000
5000
2000
1000
500
200
100
300
100
50
20
10
30
10
–0.1 –0.3
3
1
0
V
f = 1 MHz
Drain Source Voltage V
GS
–10
= 0
Switching Characteristics
Typical Capacitance vs.
Drain Current
Drain Source Voltage
t
d(off)
–1
V
PW = 5 s, duty < 1 %
–20
GS
= –10 V, V
–3
–30
–10
I
D
t f
DS
DS
–40
(A)
r t
–30
t
= –30 V
d(on)
Coss
Crss
Ciss
(V)
–100
–50