HAT1055RJ Renesas Technology, HAT1055RJ Datasheet - Page 4

• Manufacturer Part Number: HAT1055RJ
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1055R, HAT1055RJ
Main Characteristics
Rev.1.00, Aug.29.2003, page 4 of 9
–10
4.0
3.0
2.0
1.0
–8
–6
–4
–2
0
0
Test Condition:
Drain to Source voltage
When using the glass epoxy board
(FR4 40
Power vs. Temperature Derating
Typical Output Characteristics
Ambient Temperature
–2
50
–10 V
–6 V
–4.5 V
40
–4
100
1.6 mm) PW
–6
V
Pulse Test
GS
150
V
Ta ( C)
=–2.5 V
DS
–8
10 s
–3.5 V
(V)
200
–10
–0.003
–0.001
–0.03
–0.01
–100
–0.3
–0.1
–30
–10
–10
–8
–6
–4
–2
–3
–1
–0.1 –0.3
0
Note 6: When using the glass epoxy board
Operation in
this area is
limited by R
Ta = 25 C
1 shot Pulse
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
DS
Typical Transfer Characteristics
Maximum Safe Operation Area
–1
(FR4 40
= –10 V
Tc = 75 C
–1
DS(on)
–2
–3
40
–3
–25 C
–10
25 C
1.6 mm)
V
V
–4
–30
DS
GS
(V)
(V)
–100
–5