GWM180-004X2 IXYS Corporation, GWM180-004X2 Datasheet
GWM180-004X2
Manufacturer Part Number
GWM180-004X2
Description
Three phase full Bridge
Manufacturer
IXYS Corporation
Datasheet
1.GWM180-004X2.pdf
(6 pages)
www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
Preliminary data
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
1)
MOSFETs
Symbol
V
V
I
I
I
I
I
I
DSS
GSS
D25
D90
D110
F25
F90
F110
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
on chip level at
V
V
V
V
V
inductive load
V
I
T
with heat transfer paste (IXYS test setup)
Conditions
T
T
T
T
T
T
T
D
GS
GS
GS
GS
J
J
C
C
C
C
C
C
DS
DS
= 135 A; R
= 25°C to 150°C
= 125°C
= 25°C
= 90°C
= 110°C
= 25°C (diode)
= 90°C (diode)
= 110°C (diode)
+ R
= V
= 10 V ; I
= 20 V; I
= ± 20 V; V
= 10 V; V
= +10/0 V; V
Pin to Chip
DSS
; V
)
D
D
GS
DS
G
= 100 A
= 1 mA
= 39 Ω;
DS
= 0 V
= 20 V; I
DS
= 0 V
= 24 V
D
= 100 A
T
T
T
T
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
G1
S1
G2
S2
(T
J
= 25°C, unless otherwise specified)
min.
G3
S3
G4
S4
2.5
Characteristic Values
0.003
Maximum Ratings
0.12
0.51
typ.
110
150
240
350
170
1.9
2.8
1.3
50
33
30
G5
S5
G6
S6
max.
± 20
180
136
120
182
112
2.5
4.5
0.2
1.0
1.6
40
88
5
K/W
K/W
mW
mW
mJ
mJ
mJ
nC
nC
nC
µA
µA
µA
ns
ns
ns
ns
L+
L1
L2
L3
L-
V
V
A
A
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 2 lead forms available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
DSS
DSon typ.
connections
with optimized heat transfer
Straight leads
GWM 180-004X2
DSon
= 40 V
= 180 A
= 1.9 mW
Surface Mount Device
20110307c
1 - 6
Datasheet pdf - http://www.DataSheet4U.net/
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GWM180-004X2 Summary of contents
Page 1
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package Preliminary data MOSFETs Symbol Conditions 25°C to 150°C DSS 25°C D25 90°C D90 ...
Page 2
Source-Drain Diode Symbol Conditions V (diode 100 100 A; -di /dt = 600 A/µ 125° ...
Page 3
Leads Ordering Packing Unit Marking Straight Standard GWM 180-004X2 - SL SMD Standard GWM 180-004X2 - SMD IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved S L traight eads GWM ...
Page 4
I = 0.25 mA DSS 1.1 V DSS 1.0 normalized 0.9 0.8 0.7 - Fig. 1 Drain source breakdown voltage V versus junction temperature T 400 300 10 V ...
Page 5
I = 135 25° [ Fig. 7 Gate charge characteristics 0 ...
Page 6
Fig. 13 Reverse recovery time t of the body diodes vs. di/dt 0.6 0 0.4 100 A Q 150 A rr 0.3 [µC] ...