BUK7830-30 Philips Semiconductors, BUK7830-30 Datasheet - Page 5

• Manufacturer Part Number: BUK7830-30
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.9. Normalised drain-source on-state resistance.
a = R
60
50
40
30
20
10
15
10
1.5
0.5
I
0
D
5
0
2
1
0
Fig.8. Typical transconductance, T
-50
0
0
ID / A
= f(V
gfs / S
a
Fig.7. Typical transfer characteristics.
DS(ON)
GS
g
Tj / C = 25
10
SOT223 30V Trench
) ; conditions: V
fs
/R
2
= f(I
DS(ON)25 ˚C
0
D
); conditions: V
20
transistor
4
= f(T
150
VGS / V
Tj / C
ID / A
30
50
DS
j
); I
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
D
6
= 3.2 A; V
DS
40
Tj / C = 25
= 25 V
100
j
8
= 25 ˚C .
50
7830-30
GS
7830-30
150
= 10 V
150
10
60
j
5
10000
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
100
V
Fig.12. Typical capacitances, C
-100
5
4
3
2
1
0
I
C = f(V
GS(TO)
0.1
D
VGS(TO) / V
0
C / pF
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
j
); conditions: I
0
1
2%
Tj / C
2
VDS / V
50
j
GS
D
= 25 ˚C; V
typ
= 1 mA; V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
Product specification
10
BUK7830-30
iss
, C
150
98%
BUK759-60
DS
DS
oss
4
= V
7528-30
, C
= V
Rev 1.100
Ciss
Coss
Crss
200
GS
rss
GS
.
100
5