BUK7830-30 Philips Semiconductors, BUK7830-30 Datasheet

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BUK7830-30

Manufacturer Part Number
BUK7830-30
Description
TrenchMOS transistor Standard level FET
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology, the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
applications.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
December 1997
TrenchMOS
Standard level FET
SYMBOL
V
V
I
I
I
P
T
SYMBOL
R
R
D
D
DM
PIN
V
stg
DS
DGR
tot
th j-sp
th j-amb
1
2
3
4
GS
, T
j
gate
drain
source
drain (tab)
purpose
enhancement
DESCRIPTION
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
transistor
switching
mode
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
j
DS
tot
DS(ON)
CONDITIONS
-
R
-
T
T
T
T
T
T
T
T
-
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.19
1
sp
amb
sp
amb
sp
amb
sp
amb
GS
PARAMETER
Drain-source voltage
Drain current (DC) T
Drain current (DC) T
Total power dissipation
Junction temperature
Drain-source on-state
resistance
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
1
2
4
3
V
GS
= 10 V
sp
amb
= 25 ˚C
= 25 ˚C
SYMBOL
TYP.
MIN.
- 55
12
-
-
-
-
-
-
-
-
-
-
-
-
g
Product specification
MAX.
MAX.
12.8
51.2
23.6
150
MAX.
5.9
4.1
8.3
1.8
30
30
16
15
70
12.8
150
9
BUK7830-30
5.9
8.3
30
30
d
s
Rev 1.100
UNIT
UNIT
K/W
K/W
UNIT
W
W
˚C
m
V
V
V
A
A
A
A
A
A
W
˚C
V
A
A

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BUK7830-30 Summary of contents

Page 1

... T = 100 ˚ 100 ˚C amb ˚ ˚C amb ˚ ˚C amb - CONDITIONS Mounted on any PCB Mounted on PCB of Fig.19 1 Product specification BUK7830-30 MAX. UNIT ˚C 12 ˚C 5.9 amb 8.3 150 SYMBOL MIN. MAX. UNIT - ...

Page 2

... GS G Resistive load Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad 2 Product specification BUK7830-30 MIN. MAX. UNIT - 2 kV MIN. TYP. MAX. UNIT 30 ...

Page 3

... 5.9 A; -dI /dt = 100 - CONDITIONS ˚ Product specification BUK7830-30 MIN. TYP. MAX. UNIT - - 6 24 0. 115 - MIN. TYP. MAX. UNIT - - 60 mJ Rev 1 ...

Page 4

... Fig.6. Typical on-state resistance Product specification BUK7830-30 Zth j-amb / (K/ 0.5 0.2 0.1 0.05 0. 1E-07 1E-05 1E-03 1E-01 1E+ Fig.4. Transient thermal impedance f(t); parameter j-mb p BUK7830- VGS / VDS / f(V ); parameter 6.5 VGS / f(I ); parameter V DS(ON BUKX83 ...

Page 5

... 10000 1000 100 100 150 Fig.12. Typical capacitances 3 f Product specification BUK7830-30 VGS(TO max. typ. min. - 100 Fig.10. Gate threshold voltage. = f(T ); conditions mA; V GS(TO Sub-Threshold Conduction 2% typ Fig.11. Sub-threshold drain current. ...

Page 6

... Fig.15. Normalised avalanche energy rating DSS 7830-30 VGS 0 1.5 2 Fig.16. Avalanche energy test circuit VGS 0 6 Product specification BUK7830- 100 120 140 Tmb / f(T ); conditions 5 VDS - T.U. RGS shunt 2 0 DSS ...

Page 7

... Philips Semiconductors TrenchMOS transistor Standard level FET MOUNTING INSTRUCTIONS Fig.18. soldering pattern for surface mounting SOT223. PRINTED CIRCUIT BOARD December 1997 3.8 min 1.5 min 2.3 6.3 1.5 min (3x) 1.5 min 4.6 7 Product specification BUK7830-30 Dimensions in mm. Rev 1.100 ...

Page 8

... Philips Semiconductors TrenchMOS transistor Standard level FET Fig.19. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). December 1997 Product specification BUK7830-30 Dimensions in mm. 18 4.5 Rev 1.100 ...

Page 9

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to surface mounting instructions for SOT223 envelope. 3. Epoxy meets UL94 V0 at 1/8". December 1997 3.1 0.32 0.24 2.9 0.10 0. max 1.05 1.8 2.3 max 0.85 Fig.20. SOT223 surface mounting package. 9 Product specification BUK7830-30 6.7 6 3.7 7.3 6.7 3 0.80 M 0.1 B 0.60 (4x) 4.6 0 Rev 1.100 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 10 Product specification BUK7830-30 Rev 1.100 ...

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