BUK446-800A Philips Semiconductors, BUK446-800A Datasheet - Page 3

• Manufacturer Part Number: BUK446-800A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
May 1995
PowerMOS transistor
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
0.01
120
110
100
100
120
110
100
0.1
90
80
70
60
50
40
30
20
10
& I
90
80
70
60
50
40
30
20
10
10
0
Fig.3. Safe operating area. T
0
1
Fig.1. Normalised power dissipation.
10
0
DM
0
PD%
ID%
ID / A
= f(V
PD% = 100 P
20
D
20
/I
D 25 ˚C
DS
); I
40
40
100
= f(T
DM
DC
single pulse; parameter t
60
60
hs
D
Ths / C
Ths / C
VDS / V
B
/P
A
with heatsink compound
); conditions: V
Normalised Current Derating
80
D 25 ˚C
80
Normalised Power Derating
with heatsink compound
1000
100
100
= f(T
100 us
1 ms
100 ms
tp = 10 us
10 ms
BUK446-800A,B
hs
hs
120
= 25 ˚C
120
)
GS
140
140
10 V
p
3
Fig.5. Typical output characteristics, T
0.001
Fig.6. Typical on-state resistance, T
0.01
10
0.1
8
6
4
2
0
10
8
6
4
2
0
1
1E-07
0
ID / A
0
Fig.4. Transient thermal impedance.
RDS(ON) / Ohm
Zth / (K/W)
D =
0.05
0.02
0.5
0.2
0.1
Z
0
R
4
th j-hs
4
I
DS(ON)
D
= f(V
1E-05
4.2
= f(t); parameter D = t
8
2
= f(I
DS
4.4
12
); parameter V
D
); parameter V
VDS / V
ID / A
1E-03
t / s
VGS / V =
4.6
VGS / V =
16
P
D
BUK446-800A/B
4
Product Specification
20
4.8
t
p
T
1E-01
GS
BUK4y6-800A
BUK4y6-800A
D =
24
GS
p
/T
BUKx46-hv
10
5
6
j
T
j
t
= 25 ˚C .
p
6
t
= 25 ˚C .
28
Rev 1.200
1E+01
4.8
4.6
4.4
4.2
10
5
4