BUK446-1000B Philips Semiconductors, BUK446-1000B Datasheet

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... Drain-source on-state DS(ON) resistance PIN CONFIGURATION case CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS with heatsink compound 1 Product Specification BUK446-1000B MAX. UNIT 1000 1 SYMBOL MAX. UNIT - 1000 V - 1000 1 1 ...

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... Measured from source lead 6 mm from package to source bond pad CONDITIONS R.H. 65% ; clean and dustfree CONDITIONS - - 1.7 A; -dI /dt = 100 100 Product Specification BUK446-1000B MIN. TYP. MAX. UNIT 1000 - - V 2.1 3.0 4 0.1 1 100 ...

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... Fig.5. Typical output characteristics BUK446-1000B 100 100 1000 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK446-1000B Zth / (K/W) BUKx46- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance. ...

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... f 10000 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK446-1000B VGS(TO max. typ. min. -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA ...

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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions 3.5 A; parameter May 1995 BUK456-1000 VDS / V =200 8 800 Fig.14. Typical reverse diode current f Product Specification BUK446-1000B BUK456-1000A 150 VSDS / V ); conditions parameter T SDS GS Rev 1.200 2 j ...

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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". May 1995 10.2 max 5.7 max 3.2 3.0 4 0.9 M 0.4 0.7 2.54 5.08 top view 6 Product Specification BUK446-1000B 4.4 max 0.9 0.5 2.9 max 4.4 4.0 7.9 7.5 seating plane 13.5 min 0.55 max 1.3 Rev 1.200 17 max ...

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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1995 7 Product Specification BUK446-1000B Rev 1.200 ...