BUK446-1000B Philips Semiconductors, BUK446-1000B Datasheet - Page 4

• Manufacturer Part Number: BUK446-1000B
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
May 1995
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
= f(V
6
5
4
3
2
1
0
5
4
3
2
1
0
0
0
Fig.7. Typical transfer characteristics.
0
DS(ON)
-60 -40 -20
ID / A
gfs / S
a
GS
g
) ; conditions: V
fs
/R
= f(I
Tj / C =
DS(ON)25 ˚C
2
D
); conditions: V
0
2
20
= f(T
4
25
VGS / V
ID / A
Tj / C
40
DS
j
); I
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
60
D
6
= 1.5 A; V
DS
4
80 100 120 140
150
= 25 V
BUK456-1000A
BUK456-1000A
8
j
= 25 ˚C .
GS
= 10 V
10
6
j
4
V
Fig.12. Typical capacitances, C
10000
C = f(V
GS(TO)
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
4
3
2
1
0
D
100
-60
10
= f(V
VGS(TO) / V
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
-40
GS)
DS
); conditions: V
-20
; conditions: T
j
); conditions: I
1
0
20
2 %
20
max.
typ.
min.
Tj / C
40
VDS / V
SUB-THRESHOLD CONDUCTION
2
VGS / V
j
GS
= 25 ˚C; V
60
D
= 1 mA; V
BUK446-1000B
= 0 V; f = 1 MHz
typ
Product Specification
80
3
100 120 140
iss
, C
BUK4y6-800
98 %
40
DS
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.200
GS
rss
GS
.