XN06211 Panasonic Semiconductor, XN06211 Datasheet
XN06211
Manufacturer Part Number
XN06211
Description
Silicon NPN epitaxial planar transistor
Manufacturer
Panasonic Semiconductor
Datasheet
1.XN06211.pdf
(3 pages)
www.DataSheet4U.com
Composite Transistors
XN06211
Silicon NPN epitaxial planar transistor
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR2211 (UN2211) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
(Transistors with built-in resistor)
FE
Ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
(XN6211)
a
Symbol
= 25°C ± 3°C
V
V
Symbol
h
T
V
R
P
I
T
FE(Small
CBO
CEO
V
V
/Large)
a
I
I
I
V
V
C
stg
CE(sat)
1
T
h
j
CBO
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
100
300
150
CB
CE
EB
CE
CE
CC
CC
CB
Note) The part number in the parenthesis shows conventional part number.
50
50
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00100BED
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
C
mA
E
E
= 0
= 0
°C
°C
V
V
= 0
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= 5 mA
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 7Z
Internal Connection
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
10˚
EIAJ: SC-74
0.30
0.50
4
3
+0.10
–0.05
+0.10
–0.05
(0.95)
2.90
2
1.9
5
±0.1
+0.20
–0.05
−30%
(0.95)
0.50
Min
4.9
0.8
50
50
35
Tr2
6
1
4
3
0.99
Typ
150
1.0
10
5
2
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
+30%
6
1
Max
0.25
0.1
0.5
0.5
0.2
1.2
0.16
+0.10
–0.06
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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XN06211 Summary of contents
Page 1
... Composite Transistors XN06211 Silicon NPN epitaxial planar transistor For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • UNR2211 (UN2211) × 2 ■ ...
Page 2
... XN06211 500 400 300 200 100 120 160 ( °C ) Ambient temperature T a 400 = 300 = 75° 200 25°C −25°C 100 100 1 000 Collector current I (mA) C 100 = 0 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...