SSM6K08FU Toshiba Semiconductor, SSM6K08FU Datasheet - Page 2

• Manufacturer Part Number: SSM6K08FU
• Description: CategoryTOSHIBA Field Effect Transistor
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Switching Time Test Circuit
Precaution
product. For normal switching operation, V
voltage than V
(Relationship can be established as follows: V
this product.
V
Please take this into consideration for using the device. V
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note2: Pulse test
(a) Test Circuit
th
can be expressed as voltage between gate and source when low operating current value is I
2.5 V
0
Characteristics
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
DD
IN
G
10 ms
: t
= 4.7 W
= 10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
(Ta = = = = 25°C)
V
V
V
R
Symbol
(BR) DSS
(BR) DSX
DD
DS (ON)
½Y
OUT
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
GS (on)
th
fs
½
GS (off)
requires higher voltage than V
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
< V
= 1 mA, V
= 1 mA, V
= 0.8 A, V
= 0.8 A, V
= 0.8 A, V
= ±12 V, V
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10 V, V
= 10 V, V
= 10 V, I
= 0~2.5 V, R
th
2
OUT
IN
< V
GS
D
D
Test Condition
GS
GS
GS
GS
GS
GS (on)
D
= 0.1 mA
= 0.8 A
GS
GS
GS
GS
recommended voltage of 2.5 V or higher to turn on
DS
= 0.8 A,
= 0
= -12 V
= 4 V
= 2.5 V
= 2.0 V
G
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0
= 4.7 W
)
V
DS (ON)
2.5 V
V
0 V
DD
(Note2)
(Note2)
(Note2)
(Note2)
th
and V
Min
0.5
2.0
¾
20
12
¾
¾
¾
¾
¾
¾
¾
¾
¾
t
10%
on
GS (off)
t
r
Typ.
10%
90%
100
125
306
77
44
74
16
15
¾
¾
¾
¾
¾
¾
SSM6K08FU
D
requires lower
= 100 mA for this
90%
t
2002-01-24
off
Max
105
140
210
1.2
t
±1
¾
¾
¾
¾
¾
¾
¾
¾
f
1
Unit
mW
mA
mA
pF
pF
pF
ns
V
V
S