SSM6K08FU Toshiba Semiconductor, SSM6K08FU Datasheet

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SSM6K08FU

Manufacturer Part Number
SSM6K08FU
Description
CategoryTOSHIBA Field Effect Transistor
Manufacturer
Toshiba Semiconductor
Datasheet

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High Speed Switching Applications
·
·
·
Maximum Ratings
Marking
Circuit
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Small package
Low on resistance:
High-speed switching: t
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note1: Mounted on FR4 board.
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
6
1
(top view)
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm
K D C
Characteristics
5
2
4
3
(Ta = = = = 25°C)
DC
Pulse
R
R
t
on
off
on
on
= 16 ns (typ.)
= 15 ns (typ.)
= 105 mΩ (max) (@V
= 140 mΩ (max) (@V
SSM6K08FU
Symbol
(Note1)
V
V
T
T
I
GSS
I
DP
P
DS
stg
D
ch
D
GS
GS
-55~150
Equivalent
= 4 V)
= 2.5 V)
Rating
±12
300
150
2
1.6
3.2
20
1
´ 6) Figure 1.
6
1
Unit
mW
5
2
°C
°C
V
V
A
4
3
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
SSM6K08FU
2-2J1D
2002-01-24
Unit: mm

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SSM6K08FU Summary of contents

Page 1

... Symbol Rating ±12 V GSS DC I 1.6 D Pulse I 3 300 (Note1) T 150 ch -55~150 T stg 2 ´ 6) Figure 1. Equivalent 1 SSM6K08FU Unit °C JEDEC °C JEITA TOSHIBA Weight: 6.8 mg (typ Unit: mm ― ― 2-2J1D 2002-01-24 ...

Page 2

... off ( OUT (c) V OUT V DD requires higher voltage than V GS (on) < V < (off (on) recommended voltage of 2 higher to turn SSM6K08FU Min Typ. Max ¾ ¾ ±1 ¾ ¾ 20 ¾ ¾ 12 ¾ ¾ ¾ 0.5 1.2 ¾ ¾ (Note2) 2.0 (Note2) ¾ ...

Page 3

... Common Source 300 200 100 0 3 -25 0 Ambient temperature Ta (°C) 4 Common Source 25° -0 Drain-Source voltage V DS (V) 3 SSM6K08FU I – 100°C 25°C -25°C 0.8 1.2 1 – (ON 2 100 125 150 I – ...

Page 4

... Common Source MHz Ta = 25°C 5 0.1 300 10000 350 300 250 200 150 100 SSM6K08FU |Y | – 100 300 1000 3000 10000 Drain current I D (mA) C – iss C oss C rss 0 100 ...

Page 5

... Ta = 25°C 0.1 Mounted on FR4 board (25.4 mm ´ 25.4 mm ´ 1 pad: 0.32 mm ´ 6) Figure 1 0.01 * Single non-repetitive pulsed Ta = 25°C Curves must be derated 0.003 linearly with increase in temperature. 0.001 0.1 0 Drain-Source voltage V DS (V) 30 100 0.4 mm 25.4 mm ´ 25.4 mm ´ 1 ´ Pad: 0.32 mm Figure 1 5 SSM6K08FU 2002-01-24 ...

Page 6

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 SSM6K08FU 000707EAA 2002-01-24 ...

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