SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet - Page 4

• Manufacturer Part Number: SSM6J08FU
• Description: Power Management Switch
• Manufacturer: Toshiba Semiconductor

1000
-1.0
-0.8
-0.6
-0.4
-0.2
100
-10
10
-8
-6
-4
-2
-0.01
-25
0
1
0
0
Common Source
I D = -1.3 A
Ta = 25°C
t on
t r
0
Ambient temperature Ta (°C)
2
Total gate charge Q g (nC)
Dynamic Input Characteristic
25
Drain current I D (A)
-0.1
t f
50
V
4
t – I
th
– Ta
t off
D
75
-10 V
-1
Common Source
V DD = -10 V
V GS = 0~-2.5 V
Ta = 25°C
R G = 4.7 W
6
Common Source
V DS = -3 V
I D = -0.1 mA
100
V DD = -16 V
125
8
150
-10
4
-0.01
-2.0
-1.5
-1.0
-0.5
-0.1
600
500
400
300
200
100
-10
-1
-0.1
0
0
0
0
I D max (continuous)
*: Single nonrepetitive
I D max (pulsed)
DC operation
Common Source
V GS = 0
Ta = 25°C
Ta = 25°C
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
G
Drain-Source voltage V DS (V)
-4
Drain-Source voltage V
Drain-Source voltage V
Safe operating area
D
S
-1
I
-8
I
DR
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´1.6 t
Cu pad: 0.32 mm
DR
C – V
C oss
C rss
100 ms*
C iss
0.5
– V
DS
DS
-12
10 ms*
-10
Common Source
V GS = 0
f = 1 MHz
Ta = 25°C
DS
DS
2
´ 6) Fig: 1
(V)
(V)
SSM6J08FU
-16
V DSS max
2003-02-19
-100
-20
1