SSM6J08FU Toshiba Semiconductor, SSM6J08FU Datasheet - Page 2

• Manufacturer Part Number: SSM6J08FU
• Description: Power Management Switch
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Precaution
Switching Time Test Circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 3: Pulse test
(a) Test circuit
for this product. For normal switching operation, V
requires lower voltage than V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
V
th
GS
-2.5 V
can be expressed as voltage between gate and source when low operating current value is I
recommended voltage of -2.5 V or higher to turn on this product.
0
V
R
D.U. < = 1%
V
COMMON SOURCE
Ta = 25°C
Characteristic
DD
IN
G
10 ms
: t
= 4.7 W
= -10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
R
G
th
I
(Ta = = = = 25°C)
D
.
V
V
R
Symbol
V
(BR) DSS
(BR) DSX
DS (ON)
½Y
OUT
I
I
C
C
DD
C
GSS
DSS
V
t
t
oss
on
off
iss
rss
th
fs
½
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
GS (off)
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
= -1 mA, V
= -1 mA, V
= -0.65 A, V
= -0.65 A, V
= -0.65 A, V
= ±12 V, V
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, V
= -10 V, V
= -10 V, I
= 0~-2.5 V, R
GS (on)
2
OUT
IN
< V
Test Condition
D
D
th
GS
GS
requires higher voltage than V
D
GS
GS
GS
= -0.1 mA
= -0.65 A
DS
GS
GS
GS
GS
< V
= -0.65 A,
= 0
= 12 V
= -4 V
= -2.5 V
= -2.0 V
G
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
GS (on)
= 4.7 W
V
DS (ON)
-2.5 V
)
V
0 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
DD
-0.5
Min
-20
1.3
¾
-8
¾
¾
¾
¾
¾
¾
¾
¾
¾
10%
t
on
t
r
10%
th
Typ.
90%
140
200
260
370
116
2.7
73
33
47
¾
¾
¾
¾
¾
and V
SSM6J08FU
90%
t
2003-02-19
D
off
GS (off)
-1.1
Max
180
260
460
t
±1
-1
¾
¾
¾
¾
¾
¾
¾
¾
f
= -100 mA
Unit
mW
mA
mA
pF
pF
pF
ns
ns
V
V
S