SSM3K101TU Toshiba Semiconductor, SSM3K101TU Datasheet - Page 4

• Manufacturer Part Number: SSM3K101TU
• Description: Silicon N Channel MOS Type High Speed Switching Applications
• Manufacturer: Toshiba Semiconductor

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10.0
1000
1.0
0.1
100
1000
10
800
600
400
200
0.01
0.1
0
0
Common Source
VGS=0V
f=1MHz
Ta=25°C
b
a
20
Drain-Source voltage VDS (V)
Ambient temperature Ta(°C)
-25°C
25°C
40
Drain current ID (A)
0.1
1
|Yfs| - ID
C - VDS
60
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
PD - Ta
Ta=85°C
80 100 120 140 160
Common Source
VDS=3V
Ta=25°C
10
1
Ciss
Coss
Crss
100
10
4
0.001
1000
0.01
1000
100
100
0.1
10
10
10
1
1
1
0.001
0.01
0
ton
Common Source
VGS=0V
Ta=25°C
G
toff
tf
tr
0.01
Ta=85°C
-0.2
Drain-Source voltage VDS (V)
S
D
IDR
0.1
0.1
Drain current ID (A)
Pulse w idth tw (S)
-0.4
IDR - VDS
t - ID
25°C
Rth - tw
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
1
c
b
a
-0.6
-25°C
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25°C
SSM3K101TU
10
1
-0.8
100
2007-11-01
1000
10
-1