SSM3K101TU Toshiba Semiconductor, SSM3K101TU Datasheet

SSM3K101TU

Manufacturer Part Number

SSM3K101TU

Description

Silicon N Channel MOS Type High Speed Switching Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM3K101TU.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM3K101TU

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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High Speed Switching Applications

•

Absolute Maximum Ratings

Electrical Characteristics

Note 1: Mounted on ceramic board.

Note 2: Mounted on FR4 board.

Note3: Pulse test

1.8V drive

Low on-resistance:

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Drain-Source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain-Source on-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching time

Drain-Source forward voltage

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Characteristic

Turn-on time

Turn-off time

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Pulse

= 230mΩ (max) (@V

= 138mΩ (max) (@V

= 103mΩ (max) (@V

(Ta = 25°C)

SSM3K101TU

(Ta = 25°C)

Symbol

(BR) DSS

(BR) DSX

Symbol

⏐Y

D (Note 1)

D (Note 2)

DS (ON)

DSS

GSS

DSF

oss

off

GSS

iss

rss

stg

⏐

= 1 mA, V

= 1.0 A, V

= 0.5 A, V

= 0.2 A, V

= −2.2A, V

= 20 V, V

= 3 V, I

= 10 V, V

−55~150

= ±12V, V

= 10 V, I

= 0~2.5 V, R

= 1.8 V)

= 2.5 V)

= 4.0 V)

Rating

± 12

800

500

150

2.2

4.4

Test Conditions

)

= 1 mA

= 1.0 A

= 0.75 A,

= 0

= −12 V

= 4.0 V

= 2.5 V

= 1.8 V

= 0 V

= 0

= 0, f = 1 MHz

= 0

= 4.7 Ω

Unit

°C

(Note3)

Weight: 6.6 mg (typ.)

JEDEC

JEITA

TOSHIBA

UFM

Min

0.4

2.7

⎯

1 :Gate

2 :Source

3 :Drain

−0.85

SSM3K101TU

Typ.

105

140

125

4.5

⎯

2.1±0.1

1.7±0.1

2-2U1A

2007-11-01

―

Max

−

103

138

230

1.0

±1

⎯

1.2

Unit: mm

Unit

mΩ

μA

Related parts for SSM3K101TU

SSM3K101TU Summary of contents

Page 1

... C V oss rss 0~2 off = −2.2A DSF SSM3K101TU 1 Unit °C 1 :Gate °C 2 :Source 3 :Drain UFM JEDEC JEITA TOSHIBA Weight: 6.6 mg (typ.) Min Typ ⎯ −12 V ⎯ ⎯ ⎯ ...

Page 2

... V IN OUT (c) V OUT V DD Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on) 2 SSM3K101TU 2.5 V 90% 10 10% 90 (ON off =1mA for this D ...

... Drain current ID ( VDS 4.0 2.5 1.8 1.5 Common Source Ta=25°C 0.6 0.8 1 Common Source Ta=25° Common Source Ta=25° SSM3K101TU ID - VGS 10 1 Ta=85°C 0.1 25°C 0.01 -25°C 0.001 Common Source VDS=3V 0.0001 0 1 Gate-Source voltage VGS (V) RDS(ON 300 Common Source 250 1.8V,0.2A 200 2.5V,0.5A 150 100 VGS=4V,ID= ...

Page 4

... Crss 10 100 mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm b:mounted on ceramic board (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm 80 100 120 140 160 4 SSM3K101TU IDR - VDS 10 Common Source VGS=0V Ta=25° 25°C G IDR 0.1 -25° ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K101TU 20070701-EN GENERAL 2007-11-01 ...

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SSM3K101TU Toshiba Semiconductor, SSM3K101TU Datasheet

SSM3K101TU

Available stocks

Related parts for SSM3K101TU

SSM3K101TU Summary of contents

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