SSM3J36FS Toshiba Semiconductor, SSM3J36FS Datasheet - Page 2

• Manufacturer Part Number: SSM3J36FS
• Description: Power Management Switches
• Manufacturer: Toshiba Semiconductor

Switching Time Test Circuit
Electrical Characteristics
Switching time
Drain-source forward voltage
Note2: Pulse test
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(a) Test circuit
−
2.5V
0
Characteristics
V
Duty
V
(Z
Common Source
Ta = 25°C
DD
IN
out
10 μs
: t
= −10 V
r
= 50 Ω)
≤
, t
f
1%
< 5 ns
Turn-on time
Turn-off time
IN
V
V
(Ta = 25°C)
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
|Y
C
C
DSS
GSS
V
Q
Q
t
t
Q
DSF
oss
on
off
iss
rss
R
th
fs
gd
V
gs
g
OUT
L
|
DD
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= -1 mA, V
= -1 mA, V
= -100mA, V
= -80mA, V
= -40mA, V
= -30mA, V
=330mA, V
= -16 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, I
= -10 V, I
= ±8 V, V
= -4 V
= 0 to -2.5 V, R
(b) V
(c) V
Test Conditions
2
D
D
GS
GS
GS
GS
GS
GS
DS
DS
D
GS
= -1 mA
= -100mA
GS
GS
OUT
IN
= -100mA
= 0 V
= 8 V
= -330mA
= 0 V
= -2.8 V
= -1.8 V
= -1.5 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= -4.5 V
G
= 50Ω
V
V
DD
DS (ON)
−2.5 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
0 V
-0.3
Min
190
-20
-12
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t
on
10%
t
r
90%
10%
Typ.
0.95
1.22
1.80
2.23
10.3
0.85
0.35
0.88
200
6.1
1.2
43
90
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SSM3J36FS
t
www.DataSheet4U.com
90%
off
Max
1.31
1.60
2.70
3.60
-1.0
-10
1.2
±1
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2008-06-11
t
f
Unit
mS
μA
μA
nC
pF
ns
Ω
V
V
V