SSM3J36FS Toshiba Semiconductor, SSM3J36FS Datasheet

SSM3J36FS

Manufacturer Part Number

SSM3J36FS

Description

Power Management Switches

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM3J36FS.pdf (5 pages)

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○ Power Management Switches

•

Absolute Maximum Ratings (Ta = 25 °C)

Marking

Handling Precaution

protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come

into direct contact with devices should be made of anti-static materials.

Usage Considerations

SSM3J36FS). Then, for normal switching operation, V

th.

When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is

Let V

Take this into consideration when using the device.

Low ON-resistance: R

Note1: Mounted on an FR4 board

1.5-V drive

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of

This relationship can be expressed as: V

(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 0.36 mm

be the voltage applied between gate and source that causes the drain current (I

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

P X

: R

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

Pulse

= 3.60 Ω (max) (@V

= 2.70 Ω (max) (@V

= 1.60 Ω (max) (@V

= 1.31 Ω (max) (@V

SSM3J36FS

Symbol

GSS

DSS

(Note1)

stg

GS(off)

Equivalent Circuit

< V

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

×3

GS(on)

−55 to 150

)

Rating

< V

-330

-660

150

-20

±8

must be higher than V

GS(on).

Unit

°C

(top view)

th,

Weight: 2.4 mg (typ.)

JEDEC

JEITA

TOSHIBA

and V

) to below −1 mA for the

GS(off)

must be lower than

SSM3J36FS

www.DataSheet4U.com

2-2H1B

2008-06-11

―

Unit: mm

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