STS3DPFS30 ST Microelectronics, STS3DPFS30 Datasheet - Page 3

• Manufacturer Part Number: STS3DPFS30
• Description: P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
Symbol
V
I
SDM
t
V
t
I
I
r(Voff)
SD
Q
Q
d(on)
R
RRM
I
Q
Q
F
t
t
SD
t
t
( )
rr
( )
r
gs
gd
c
f
rr
g
( )
( )
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain
(pulsed)
Forward On Voltage
Reverse
Time
Reverse
Charge
Reverse
Current
Reversed
Current
Forward Voltage drop
Parameter
Parameter
Parameter
Parameter
Recovery
Recovery
Recovery
Leakage
Current
V
R
(Resistive Load, see fig. 3)
V
V
R
(Inductive Load, see fig. 5)
I
I
V
(see test circuit, figure 5)
T
T
T
T
SD
SD
J
J
J
J
DD
DD
clamp
DD
G
G
= 25
= 125
= 25
= 125
= 3 A
= 4.7
= 4.7
= 3 A
= 15 V
= 15 V
= 15V
= 24 V
o
o
C
C
o
o
C
C
Test Conditions
Test Conditions
Test Conditions
Test Conditions
V
GS
di/dt = 100 A/ s
I
T
V
V
I
D
D
j
GS
GS
= 3 A
= 0
= 150
I
= 1.5 A
D
= 10 V
= 10 V
= 3 A
o
C
V
GS
= 10 V
V
I
V
I
F
F
R
R
=3A
=3A
=30V
=30V
Min.
Min.
Min.
Min.
Typ.
Typ.
Typ.
Typ.
0.03
0.46
4.2
5.8
2.6
15
29
23
11
11
23
34
45
STS3DPFS30
Max.
Max.
Max.
Max.
0.51
0.46
100
0.2
30
12
3
2
Unit
Unit
Unit
Unit
mA
mA
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
V
V
3/5