STS3DPFS30 ST Microelectronics, STS3DPFS30 Datasheet - Page 2

• Manufacturer Part Number: STS3DPFS30
• Description: P - CHANNEL MOSFET PLUS SCHOTTKY RECTIFIER
• Manufacturer: ST Microelectronics

STS3DPFS30
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/5
V
Symbol
Symbol
Symbol
R
R
R
V
g
(BR)DSS
I
thj-amb
thj-amb
I
I
C
T
DS(on)
C
C
GS(th)
D(on)
fs
GSS
DSS
T
stg
oss
iss
rss
( )
j
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junction-ambientSCHOTTKY
Storage Temperature Range
Junction Temperature
(*)
Drain-source
Breakdown Voltage
Zero
Drain Current (V
Gate-body
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse
Capacitance
mounted on FR-4 board (steady state)
Parameter
Parameter
Parameter
Gate
DS
= 0)
Leakage
Transfer
Voltage
GS
= 0)
I
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
= V
= 10 V
= 25 V
= Max Rating
= Max Rating
=
= 10V I
> I
> I
D(on)
D(on)
GS
20 V
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
D
D
f = 1 MHz
V
= 250 A
= 1.5 A
case
DS(on)max
DS(on)max
GS
= 0
= 25
Maximum
o
C unless otherwise specified)
T
V
I
c
GS
D
= 125
=1.5 A
= 0
o
C
Min.
Min.
Min.
30
2
3
-65 to 150
100
150
85
0.065
1600
Typ.
Typ.
Typ.
500
125
3
5
Max.
Max.
Max.
0.09
10
100
1
4
o
o
Unit
Unit
Unit
C/W
C/W
nA
pF
pF
pF
o
o
V
V
A
S
C
C
A
A