SIA429DJT Vishay Siliconix, SIA429DJT Datasheet - Page 4

• Manufacturer Part Number: SIA429DJT
• Description: P-Channel 20 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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SiA429DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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4
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
I
D
T
= 250 μA
75
J
0.8
= 25 °C
0.01
100
100
0.1
10
1
0.1
1.0
Safe Operating Area, Junction-to-Ambient
125
* V
Limited by R
Single Pulse
T
GS
A
= 25 °C
> minimum V
150
1.2
New Product
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
30
25
20
15
10
5
0
is specified
0.001
0
100 μs
1 ms
10 ms
100 ms
1 s, 10 s
DC
I
D
On-Resistance vs. Gate-to-Source Voltage
= 6 A; T
Single Pulse Power, Junction-to-Ambient
I
D
0.01
= 1 A; T
100
1
J
V
= 25 °C
GS
J
- Gate-to-Source Voltage (V)
= 25 °C
0.1
2
I
D
Time (s)
= 1 A; T
1
S10-2538-Rev. A, 08-Nov-10
I
D
Document Number: 67038
= 6 A; T
J
3
= 125 °C
10
J
= 125 °C
4
100
1000
5